The drains and gates are connected, and the source is connected to the substrate in each device.
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The slopes of the potential energy diagram are now such that electrons and holes move in the same direction.
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Applications for performing logic functions are obvious.
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The conclusion is that by using a heterojunction we can produce a transistor with properties superior to that of a homojunction.
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The essential thing is that when we turn to heterojunctions, the fates of electrons and holes are no longer tied together.
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The solutions they came up with are shown in Fig.
This is more similar to the traditional FETs.
Having so many different types of FETs has tested the ingenuity of those whose job is to think up symbols for new devices.
The energy diagram of Fig.
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Thus, at zero gate voltage we can have a flow of electrons.
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The dopant is silicon.
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Let us return now to our original aim.
There are naturally many varieties on the basic theme; I want to mention only one of them known as CMOS (complementary MOS) which rose to fame owing.
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Thus when Uin is low, Uout is high.
We may call such structures homostructures in contrast to heterostructures, which consist of materials of different energy gaps.
For the holes, there is no difference between the homojunction and the heterojunction; the amount of hole injection is the same in both cases.
This is what an inverter is supposed to do.
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At this point the bandgap will suddenly change.
So what can be done?
When the gates are closed there is only a trickle, but when they are open, there is a torrent of water.
Thus according to the rules of the game, the electron density there is much higher than in any other parts of the two materials.
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But surely when a device is ON, there will be a lot of current flowing.
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The problem is then to persuade the electrons that, once created in the doped material, they should move over into.
So this device could work as a fast switch or as an amplifier in analogue circuits.
Next, we need to match the Fermi energies.
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The Fermi energy of material A is quite close to the conduction band.
So, there is no doubt, heterojunctions offer more freedom in designing devices.
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The characteristics of a MOSFET.
The flow of electrons and holes is in the opposite direction.
What kind of properties should materials A and B, the two semiconductors to be joined in holy matrimony, possess?
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We no longer have to wind them up.
We can have our cake and eat it.
We want to have high mobility.
Joining them and equating their Fermi levels leads to Fig.
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Surprisingly, it turns out that we still have some freedom.
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Energy diagram when the two materials in (c) are joined together.
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So what kind of materials are we going to use?
Holes may then flow unimpeded from source to drain.
The energy diagram of semiconductor crystals.
The transistor thus obtained has even got a name.
In the present example we are showing just one such level.
For the undoped material we shall choose one which has a high mobility.
ON (UDS low) or OFF (UDS high).
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And of course the situation is similar when M1 is OFF and M2 is ON.
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For the materials usually used, the width of the well comes out of the calculations (they are pretty complicated, one needs to solve simultaneously Poisson's equation in combination with Schrödinger's equation) as about 8 nm, comparable with atomic dimensions.
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That can be easily done as shown in Fig.
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Principles of semiconductor devices (a).
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It is known as HBT or Heterostructure Bipolar Transistor.
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Is it not the best analogy a floodgate?
Let us see what happens when the input voltage Uin is approximately zero.
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